Conference paper
Diode-Laser-Pumped 551-nm Upconversion Laser in YLiF4;Er3+
T. Herbert, W.P. Risk, et al.
ASSL 1990
Paper
Localised Temperature Dynamics of Gaaias Laser Facets Investigated by Raman Microprobe Measurements
Abstract
Raman micro-probe studies of diode laser facet temperatures in CW operation show a significant linear temperature rise below the laser threshold and a rapid nonlinear heating above the threshold. Dynamical measurements using current injection pulses show fast heating of the laser facet with a sub-microsecond risetime and much slower cooling within several micro-seconds. © 1990, The Institution of Electrical Engineers. All rights reserved.