Paper

01 Jan 1966

Light Sensitive, Efficient Electroluminescent ZnTe Switching Diodes

View publication

Abstract

No abstract available.

Related

Paper

Boron atom distributions in ion-implanted silicon by the (n,⁴He) nuclear reaction

Paper

Defining the "random" spectrum as used in the channeling technique of nuclear backscattering

Paper

Self-compensation-limited conductivity in binary semiconductors. III. Expected correlations with fundamental parameters

Paper

Comment on “The diffusion of antimony in heavily doped and (sic) n- and p-type silicon” [J. Mater. Res. 1, 705 (1986)]

View all publications