PaperExact description and data fitting of ion-implanted dopant profile evolution during annealingR. Ghez, G.S. Oehrlein, et al.Applied Physics Letters
PaperEffect of O+ and Ne+ implantation on the surface characteristics of thermally oxidized SiN.J. Chou, B.L. CrowderJournal of Applied Physics
PaperDiffusion of zinc in gallium arsenide: A new modelU. Gösele, F.F. MoreheadJournal of Applied Physics