S. Cohen, T.O. Sedgwick, et al.
MRS Proceedings 1983
The average lattice strain per Ga atom with respect to pure silicon, total="a/aNGa =+(0.9±0.1)×10-24 cm3, for heavily doped Si was measured by high-resolution x-ray diffraction. This strain includes effects of both substitutional Ga atoms in the lattice and doping-related holes in the valence band. The local size-effect lattice strain around substitutional Ga atoms, which is not expected to be affected significantly by valence-band holes, was determined from the Ga-to-Si nearest-neighbor distance measured using extended x-ray-absorption fine structure (EXAFS). This distance, rNN=2.41±0.02, is 0.06 larger than the usual Si-to-Si nearest-neighbor distance and was used to calculate the size-effect contribution per Ga atom to the average lattice strain, size=(1.2±0.3)×10-24 cm3. This value was subtracted from the overall lattice strain total to determine the lattice strain per valence-band hole, h=-(0.3±0.3)×10-24 cm3, and the hydrostatic deformation potential for the valence-band edge in silicon, av=-0.5±0.5 eV. These results were obtained from Si samples prepared by liquid-phase epitaxy. They were characterized by Rutherford backscattering, ion channeling, electron microscopy, and resistivity measurements, as well as by x-ray diffraction and EXAFS. The samples were of excellent crystal quality, with uniform Ga concentrations of 1.0 and 1.5×1020 cm-3, with substitutional fractions greater than 95% and similar electrical resistivities of 2×10-3 cm. © 1992 The American Physical Society.
S. Cohen, T.O. Sedgwick, et al.
MRS Proceedings 1983
Elizabeth A. Sholler, Frederick M. Meyer, et al.
SPIE AeroSense 1997
Fernando Marianno, Wang Zhou, et al.
INFORMS 2021
R. Ghez, M.B. Small
JES