Manuel Le Gallo, Corey Liam Lammie, et al.
APL Mach. Learn.
We demonstrate a ternary (LaxY1-x)2O 3 thin-film oxide that can be grown epitaxially on Si(111) substrates with a lattice constant that can be matched to twice the lattice constant of silicon. We further show that silicon can then be deposited epitaxially (though with a high defect density) on this oxide such that epitaxial silicon/oxide/silicon structures may be grown. We discuss the microstructural relationships and the growth modes for the oxide on silicon and silicon on oxide growths. © 2002 American Institute of Physics.
Manuel Le Gallo, Corey Liam Lammie, et al.
APL Mach. Learn.
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