A high performance epitaxial SiGe-base ECL BiCMOS technology
D.L. Harame, E.F. Crabbe, et al.
IEDM 1992
Experiments are described in which ∼0.2-s-wide argon laser pulses are incident on a 6-μm-thick n- Si epitaxial layer. Local melting and refreezing of both the layer and a small volume of the underlying p+ boron-doped Si substrate occur. In the molten phase, boron diffusion from the substrate is sufficient to make a low resistance path between the front surface and the substrate, with a nearly uniform dopant concentration of 5×10 18/cm3. The melted/recrystallized front surface diameter is ∼50 μm. Unique features and applications of this type of substrate contacting are discussed.
D.L. Harame, E.F. Crabbe, et al.
IEDM 1992
R.J. van Gutfold, R. Vigliotti, et al.
CLEO 1992
R.J. van Gutfold, R. Vigliotti, et al.
CLEO 1992
J.B. Kuang, M.J. Saccamango, et al.
IEEE International SOI Conference 1999