Josephson Edge-Junction Devices Using E-Beam Lithography

Abstract

Superconducting interferometers containing up to nine lithographic levels were exposed by direct e-beam writing in a vector-scan (VS) system. The number and thickness of the layers presented a new challenge to e-beam and liftoff resist technology. A novel approach to level-to-level registration was required. In the edge-junction structure, the Josephson-junction width of typically 0.3 µm was achieved by forming the Josephson junctions on the edges of the niobium base electrode without using submicrometer lithography. Such Nb-oxide-Pb-alloy edge junctions are promising for logic and memory applications. The ruggedness of a niobium base electrode is combined with a high-current-density device having low capacitance by virtue of the small junction area. Copyright © 1981 by The Institute of Electrical and Electronics Engineers, Inc.