PaperStructure of GaAs(001) (2×4)-c(2×8) determined by scanning tunneling microscopyM.D. Pashley, K.W. Haberern, et al.Physical Review Letters
PaperSilicon diffusion at polycrystalline-Si/GaAs interfacesK.L. Kavanagh, J.W. Mayer, et al.Applied Physics Letters
PaperTemperature dependence of the direct band gap of InxGa1-xAs (x=0.06 and 0.15)Z. Hang, D. Yan, et al.Physical Review B
PaperProximate capless annealing of GaAs using a controlled-excess As vapor pressure sourceJ. Woodall, H. Rupprecht, et al.Applied Physics Letters
