PaperTemperature dependence of the direct band gap of InxGa1-xAs (x=0.06 and 0.15)Z. Hang, D. Yan, et al.Physical Review B
PaperElectronic structure of metal/semiconductor interfaces from cathodoluminescence and soft X-ray photoemission spectroscopiesL.J. Brillson, I.M. Vitomirov, et al.Applied Surface Science
Conference paperEpi-GaAs surface treatment - impact of mixed phases on device performanceAlan C. Warren, J. WoodallECS Meeting 1989
PaperStructure and recombination in InGaAs/GaAs heterostructuresE.A. Fitzgerald, D. Ast, et al.Journal of Applied Physics
