In-Sang Yang, A.G. Schrott, et al.
Physical Review B
Strong, stable adhesion of Cu thin films deposited on Al2O3 (sapphire) can be obtained by presputtering the substrate surface with 500 eV Ar+ ions before deposition of copper. The existence of a well-defined optimum fluence of sputtering ions suggests that the interface atomic configuration can be optimized to favor the formation of Cu-Al-O chemical bonding. The existence of a ternary bonding environment is inferred independently from a new dominant peak in the XPS spectrum from interface copper, whose occurrence is correlated with the optimized adhesion conditions. © 1987 Elsevier Science Publishers B.V.
In-Sang Yang, A.G. Schrott, et al.
Physical Review B
L.J. Schowalter, J.R. Jimenez, et al.
Journal of Crystal Growth
C.W. White, G. Farlow, et al.
Materials Letters
S. García-Blanco, A.J. Kellock, et al.
Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms