I.K. Pour, D.J. Krajnovich, et al.
SPIE Optical Materials for High Average Power Lasers 1992
Electron paramagnetic resonance studies of the cooperative Jahn-Teller system TmAsO4 doped with Gd show that above ∼ 140 K dynamic random strains caused by the strong interaction of the first excited electronic doublet of Tm3+ with phonons are the major mechanisms for the line broadenings. At lower temperatures, because of the weaker interactions of the ground electronic doublet with the phonons, the induced dipolar mechanism for the line broadenings becomes important. © 1977.
I.K. Pour, D.J. Krajnovich, et al.
SPIE Optical Materials for High Average Power Lasers 1992
Arvind Kumar, Jeffrey J. Welser, et al.
MRS Spring 2000
R.W. Gammon, E. Courtens, et al.
Physical Review B
William Hinsberg, Joy Cheng, et al.
SPIE Advanced Lithography 2010