Interface effects in the formation of silicon oxide on metal silicide layers over silicon substrates

Abstract

Samples of several metal silicides grown over silicon substrates and samples of pure silicon were oxidized at the same time in an atmosphere of wet oxygen. The rates of silicon oxide growth were analyzed in terms of both linear and parabolic coefficients. The biggest difference is seen between the linear coefficients for metallic silicides on the one hand and pure silicon on the other, with a semiconducting silicide occupying an intermediate position. While the question of why metallic oxides are not always generated simultaneously with SiO2 remains a mystery, the results suggest a possible interpretation.