Qiu Dai, Yingyu Chen, et al.
Langmuir
We report herein the demonstration of a simple, low-cost Cu back-end-of-the-line (BEOL) dual-damascene integration using a novel photopatternable low-κ dielectric material concept that dramatically reduces Cu BEOL integration complexity. This κ = 2.7 photo-patternable low-κ material is based on the SiCOH-based material platform and has sub-200nm resolution capability with 248nm optical lithography. Cu/photopatternable low-κ dual-damascene integration at 45nm node BEOL fatwire levels has been demonstrated with very high electrical yields using the current manufacturing infrastructure. The photo-patternable low-κ concept is, therefore, a promising technology for highly efficient semiconductor Cu BEOL manufacturing. © 2010 The Japan Society of Applied Physics.
Qiu Dai, Yingyu Chen, et al.
Langmuir
Qiu Dai, Jane Frommer, et al.
Langmuir
Takeshi Nogami, Tibor Bolom, et al.
IEDM 2010
Takeshi Nogami, M. Chae, et al.
IITC/AMC 2014