Isaac Lauer, Nicolas Loubet, et al.
VLSI Technology 2015
Conference paper
BEOL process integration for the 7 nm technology node
Abstract
A 36 nm pitch BEOL has been evaluated for the 7 nm technology node. EUV lithography was employed as a single-exposure patterning solution. For the first time, it is shown that excellent reliability results can be obtained for Cu interconnects at these small dimensions, by using a TaN/Ru barrier system and a selective Co cap.