Integration and reliability of CVD Ru Cap for Cu/Low-k development

Abstract

Selective CVD Ru cap deposition process has been developed for BEOL Cu/Low-k integration. Selectivity of CVD Ru deposition between Cu and dielectrics is investigated. Electrical performance, electromigration (EM) lifetime, voltage ramp (I-V), and time -dependent-dielectric-breakdown (TDDB) are also characterized for Cu interconnects capped with CVD Ru. This selective CVD Ru cap process is a good candidate for 22nm and beyond technology nodes. © 2009 IEEE.