About cookies on this site Our websites require some cookies to function properly (required). In addition, other cookies may be used with your consent to analyze site usage, improve the user experience and for advertising. For more information, please review your options. By visiting our website, you agree to our processing of information as described in IBM’sprivacy statement. To provide a smooth navigation, your cookie preferences will be shared across the IBM web domains listed here.
Publication
LEOS 2003
Conference paper
In0.53Ga0.47As/In0.52Al0.48A s SACM APDs for single photon detection
Abstract
In recent years, several commercially available avalanche photodiodes (APDs) were evaluated for their single photon counting performance. As such, single photon counting at 1.52 μm in custom Separate-Absorption-Charge-Multiplication (SACM) APDs with In0.53Ga0.47As absorption and In0.52Al0.48As multiplication layer was demonstrated. This paper optimizes the operating parameters usch as temperature, excess bias and discriminator threshold for better single photon detection performance.