Franco Stellari, Franco Zappa, et al.
IEEE Transactions on Electron Devices
We examine graphitization of amorphous carbon (a-C) in a-C/Ni bilayer samples having the structure Si/ SiO2 /a-C(3-30 nm)/Ni(100 nm). In situ x-ray diffraction (XRD) measurements during heating in He at 3 °C/s to 1000 °C showed graphitic C formation beginning at temperatures T of 640-730 °C, suggesting graphitization by direct metal-induced crystallization, rather than by a dissolution/precipitation mechanism in which C is dissolved during heating and expelled from solution upon cooling. We also find that graphitic C, once formed, can be reversibly dissolved by heating to T>950 °C, and that nongraphitic C can be volatilized by annealing in H2 -containing ambients. © 2010 American Institute of Physics.
Franco Stellari, Franco Zappa, et al.
IEEE Transactions on Electron Devices
Marcus Freitag, James C. Tsang, et al.
Nano Letters
Amal Kasry, George Tulevski, et al.
IVESC 2010
Shu-Jen Han, Josephine Chang, et al.
IEDM 2010