Amal Kasry, George Tulevski, et al.
IVESC 2010
We examine graphitization of amorphous carbon (a-C) in a-C/Ni bilayer samples having the structure Si/ SiO2 /a-C(3-30 nm)/Ni(100 nm). In situ x-ray diffraction (XRD) measurements during heating in He at 3 °C/s to 1000 °C showed graphitic C formation beginning at temperatures T of 640-730 °C, suggesting graphitization by direct metal-induced crystallization, rather than by a dissolution/precipitation mechanism in which C is dissolved during heating and expelled from solution upon cooling. We also find that graphitic C, once formed, can be reversibly dissolved by heating to T>950 °C, and that nongraphitic C can be volatilized by annealing in H2 -containing ambients. © 2010 American Institute of Physics.
Amal Kasry, George Tulevski, et al.
IVESC 2010
Marcus Freitag, Vasili Perebeinos, et al.
Nano Letters
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Nature Nanotechnology
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Applied Physics Letters