Biancun Xie, Madhavan Swaminathan, et al.
EMC 2011
We measure the spectrum and efficiency of the infrared light emission from ambipolar carbon nanotube field-effect transistors. The width of the emission peak is strongly device-structure dependent. Long devices (∼50 μm) show narrow spectral peaks that we attribute to relaxed carrier recombination, while short devices (∼500 nm) show broad peaks due to hot carrier recombination. The hot carrier distribution is limited to energies below the energies of the optical/zone boundary phonons near 180 meV. The efficiency of the radiative recombination is between 10-6 and 10-7 photons/electron-hole pair, and the possible quenching mechanisms are discussed.
Biancun Xie, Madhavan Swaminathan, et al.
EMC 2011
T.N. Morgan
Semiconductor Science and Technology
J.H. Stathis, R. Bolam, et al.
INFOS 2005
Oliver Schilter, Alain Vaucher, et al.
Digital Discovery