J. Appenzeller, R. Martel, et al.
Microelectronic Engineering
Conference paper
Improving the performance of band-to-band tunneling transistors by tuning the gate oxide and the dopant concentration
Abstract
No abstract available.
Related
M.T. Björk, J. Knoch, et al.
Applied Physics Letters
C. Sandow, J. Knoch, et al.
Solid-State Electronics
J. Appenzeller, Y.-M. Lin, et al.
Physical Review Letters