J. Knoch, S. Mantl, et al.
Solid-State Electronics
The impact of the gate oxide and the silicon-on-insulator (SOI) body thickness on the electrical performance of SOI Schottky-barrier (SB) MOSFETs with fully nickel silicided source and drain contacts is experimentally investigated. The subthreshold swing S is extracted from the experimental data and serves as a measure for the carrier injection through the SBs. It is shown that decreasing the gate oxide and body thickness allows to strongly increase the carrier injection and hence, a significantly improved ON-state of SB-MOSFETs can be obtained. © 2007, IEEE. All rights reserved.
J. Knoch, S. Mantl, et al.
Solid-State Electronics
S.F. Feste, M. Zhang, et al.
ULIS 2008
J. Knoch, M. Zhang, et al.
Microelectronic Engineering
J. Knoch, M. Zhang, et al.
Applied Physics A: Materials Science and Processing