F. Lanzerath, D. Buca, et al.
Journal of Applied Physics
The impact of the gate oxide and the silicon-on-insulator (SOI) body thickness on the electrical performance of SOI Schottky-barrier (SB) MOSFETs with fully nickel silicided source and drain contacts is experimentally investigated. The subthreshold swing S is extracted from the experimental data and serves as a measure for the carrier injection through the SBs. It is shown that decreasing the gate oxide and body thickness allows to strongly increase the carrier injection and hence, a significantly improved ON-state of SB-MOSFETs can be obtained. © 2007, IEEE. All rights reserved.
F. Lanzerath, D. Buca, et al.
Journal of Applied Physics
S.F. Feste, M. Zhang, et al.
ULIS 2008
S.F. Feste, M. Zhang, et al.
Solid-State Electronics
K.M. Indlekofer, R. Németh, et al.
Physical Review B - CMMP