Implementation of robust nickel alloy salicide process for high-performance 65nm SOI CMOS manufacturing

Abstract

Addition of Pt to Ni suicide produces a robust [NixPt (1-X)]Si, which shows an improved morphological stability, an important reduction in encroachment defect density, a reduced tendency to form NiSi2. and significant variations in monosilicide texture without degrading the device performance or the yield of high-performance 65 nm SOI technologies. © 2007 IEEE.