J.H. Stathis, R. Bolam, et al.
INFOS 2005
The influence of the dimensionality on the performance of tunneling field-effect transistors is investigated with simulations. It is shown that in a three-dimensional tunneling FET it is possible to achieve inverse subthreshold slopes smaller than 60 mV/dec. However, there is a trade-off between high on-currents and small values for the subthreshold swing. Using a carbon nanotube tunneling FET as an example it is shown that in contrast to the 3D case, one-dimensional systems offer the possibility to combine a high on-state performance with steep inverse subthreshold slopes. © 2007 Elsevier Ltd. All rights reserved.
J.H. Stathis, R. Bolam, et al.
INFOS 2005
A. Gangulee, F.M. D'Heurle
Thin Solid Films
Kenneth R. Carter, Robert D. Miller, et al.
Macromolecules
Shaoning Yao, Wei-Tsu Tseng, et al.
ADMETA 2011