About cookies on this site Our websites require some cookies to function properly (required). In addition, other cookies may be used with your consent to analyze site usage, improve the user experience and for advertising. For more information, please review your options. By visiting our website, you agree to our processing of information as described in IBM’sprivacy statement. To provide a smooth navigation, your cookie preferences will be shared across the IBM web domains listed here.
Publication
IIRW 2009
Conference paper
Impact of instrumental current scatter on fast Bias Temperature Instability testing
Abstract
To minimize charge relaxation during Bias Temperature Instability (BTI) tests, fast current sensing has become the mainstream methodology in recent years and fast source measurement units are now available commercially. In these instruments, the measurement delay and sampling time have to been significant reduced in order to meet the more stringent methodology specification of fast BTI testing. In this paper, the impact of these speed improvements in two commercially available source measurement units (SMUs) on the accuracy of threshold voltage measurements during fast BTI testing is studied in detail. ©2009 IEEE.