The DX centre
T.N. Morgan
Semiconductor Science and Technology
Strain-relaxed Si1-xGex films have been investigated using X-ray microdiffraction with a diffracted beam footprint of 0.3 μm×2 μm. Intensity variations in the diffracted beam at different positions on the sample are due to the presence of local tilted regions which are larger in area than the diffracted X-ray beam. These regions are shown to have the same lattice parameter but different orientation with respect to the Si substrate. These regions arise from dislocation pileups, which consist of a larger number of dislocations when larger mismatch strain is relieved.
T.N. Morgan
Semiconductor Science and Technology
R.M. Macfarlane, R.L. Cone
Physical Review B - CMMP
Elizabeth A. Sholler, Frederick M. Meyer, et al.
SPIE AeroSense 1997
R. Ghez, M.B. Small
JES