D.D. Awschalom, J.-M. Halbout
Journal of Magnetism and Magnetic Materials
A review of hopping conduction in small MOSFET devices at low temperatures is given. The theoretical predictions of Mott, extended to the quasi-one-dimensional limit, will be compared with experiments and it will be shown that in the limit where only a few states exist within a few kBT of the Fermi energy the conduction properties take on a radically different form. Experimental results will be compared to both fluctuation hopping dominated theories as well as resonant tunneling models. © 1986.
D.D. Awschalom, J.-M. Halbout
Journal of Magnetism and Magnetic Materials
O.F. Schirmer, W. Berlinger, et al.
Solid State Communications
Michael Ray, Yves C. Martin
Proceedings of SPIE - The International Society for Optical Engineering
Elizabeth A. Sholler, Frederick M. Meyer, et al.
SPIE AeroSense 1997