Conference paper
Effect of the back gate conduction on 0.25 μm SOI devices
J.L. Pelloie, D.K. Sadana, et al.
IEDM 1994
It is demonstrated that the drain current overshoot in partially depleted SOI MOSFET's has a significant history dependence or memory effect, even in the absence of impact ionization under low drain biases. The measured output characteristics of partially depleted SOI MOSFET's are shown to be dynamically dependent on their switching history, frequency, and bias conditions due to the finite time constants of carrier generation (thermal or impact ionization) and recombination in the floating body.
J.L. Pelloie, D.K. Sadana, et al.
IEDM 1994
J.N. Burghartz, M. Soyuer, et al.
BCTM 1996
D.L. Harame, J.H. Comfort, et al.
VLSI Technology 1993
S.J. Koester, R. Hammond, et al.
IEEE Electron Device Letters