Compression for data archiving and backup revisited
Corneliu Constantinescu
SPIE Optical Engineering + Applications 2009
A new technique is described that allows fabrication of high-temperature-stable and chemically inert Si3N4 single-material T-structures. Different layers of Si3N4 films are deposited with PECVD technique using different growing conditions. A high etch-rate selectively in BHF was observed between PECVD-grown films using high (RF) and low (LF) plasma excitation frequency. LF-PECVD films can be grown direct from nitrogen and silane, incorporate much less hydrogen, and etch up to 20 times slower in BHF than RF-PECVD films grown using ammonia and silane gas sources. T- or lift-off-type shapes can be achieved by depositing an LF-grown film on top of an RF film with subsequent patterning by lithography and RIE followed by a BHF step for selectively etching the RF layer for undercutting. Application of this new technique is described for fabrication of fully self-aligned submicron MESFET's in a dummy-gate process. © 1986.
Corneliu Constantinescu
SPIE Optical Engineering + Applications 2009
William Hinsberg, Joy Cheng, et al.
SPIE Advanced Lithography 2010
A. Gupta, R. Gross, et al.
SPIE Advances in Semiconductors and Superconductors 1990
Elizabeth A. Sholler, Frederick M. Meyer, et al.
SPIE AeroSense 1997