Conference paper
AMBIENT GAS EFFECTS ON THE REACTION OF TITANIUM WITH SILICON.
Subramanian S. Iyer, C.-Y. Ting, et al.
VLSI Science and Technology 1983
TiSi//2 is perhaps the most attractive candidate for salicide technology due to its low resistivity and the consistency in thermal formation. In salicide application using TiSi//2, there are concerns such as bridging across gates, diffusions and the interaction of Ti with SiO//2 during salicide formation. In addition, for process integration, it is important to know what the high temperature process limitations on TiSi//2 are.
Subramanian S. Iyer, C.-Y. Ting, et al.
VLSI Science and Technology 1983
Ulf Gennser, V.P. Kesan, et al.
Physical Review Letters
C.-Y. Ting, M. Wittmer, et al.
VLSI Science and Technology 1983
T.O. Sedgwick, F.M. d'Heurle, et al.
JES