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With the rapid advances in graphene field-effect transistor (GFET) performances, graphene has attracted much interest as a future channel material in RF electronics. However, the pace of the development of graphene circuits seems significantly slower. Several graphene circuits demonstrated today showing promising GHz functions still relied on ideal discrete passive components connected at the equipment level, and these circuits are limited to single transistor designs [1-3]. To compete with existing technologies requires that all active and passive components be monolithically integrated for not only the small circuit footprint and low cost but also high circuit complexity and advanced system functionality. © 2013 IEEE.
C. Wang, S.W. Nam, et al.
IEDM 2013
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