Conference paper
Graphene and carbon nanotube photonics
Fengnian Xia, Thomas Mueller, et al.
GFP 2009
We report on a high-performance back-gated carbon nanotube field-effect transistor (CNFET) with a peak transconductance of 12.5 μS and a delay time per unit length of τ/L = 19 ps/μm. In order to minimize the parasitic capacitances and optimize the performance of scaled CNFETs, we have utilized a dual-gate design and have fabricated a 40-nm-gate CNFET possessing excellent subthreshold and output characteristics without exhibiting short-channel effects. © 2005 IEEE.
Fengnian Xia, Thomas Mueller, et al.
GFP 2009
Selman Hershfield, Zhihong Chen
Journal of Applied Physics
Damon B. Farmer, Yu-Ming Lin, et al.
Applied Physics Letters
Hsin-Ying Chiu, Vasili Perebeinos, et al.
Nano Letters