High performance complementary bipolar technology

Abstract

A high-performance fully complementary bipolar technology has been realized. Both npn and pnp double-poly self-aligned transistors were fabricated together on the same chip in a 20-mask integrated process using an experimental testsite designed specifically for complementary bipolar applications. The devices were fabricated over dual n-i- and p+ patterned subcollectors with SOI substrate isolation, deep-trench collector-to-collector isolation, and a shallow trench field oxide process. Both npn and pnp were fabricated together with near-ideal characteristics, and cutoff frequencies of 50 GHz (npn) and 13 GHz (pnp) were obtained. NPN-only ECL delays reached a minimum of 25 ps per stage, while pnp-only ECL circuits reached a minimum delay of 47 ps per stage. AC-coupled complementary push-pull ECL circuits were also fabricated, demonstrating clearly the leverage of this complementary bipolar technology.