Paul M. Solomon, Isaac Lauer, et al.
IEEE Electron Device Letters
High performance p-type modulation-doped field-effect transistors (MODFET's) and metal-oxide semiconductor MODFET (MOS-MODFET) with 0.1 μm gate-length have been fabricated on a high hole mobility SiGe/Si heterojunction grown by ultrahigh vacuum chemical vapor deposition. The MODFET devices exhibited an extrinsic transconductance (g m) of 142 mS/mm, a unity current gain cut-off frequency (f T) of 45 GHz and a maximum oscillation frequency (f MAX) of 81 GHz. 5 nm-thick high quality jet-vapor-deposited (JVD) SiO 2 was utilized as gate dielectric for the MOS-MODFET's. The devices exhibited a lower gate leakage current (1 nA/μm at V gs = 6 V) and a wider gate operating voltage swing in comparison to the MODFET's. However, due to the larger gate-to-channel distance and the existence of a parasitic surface channel, MOS-MODFET's demonstrated a smaller peak g m of 90 mS/mm, f T of 38 GHz, and f MAX of 64 GHz. The threshold voltage shifted from 0.45 V for MODFET's to 1.33 V for MOS-MODFET's. A minimum noise figure (NF min) of 1.29 dB and an associated power gain (G a) of 12.8 dB were measured at 2 GHz for MODFET's, while the MOS-MODFET's exhibited a NF min of 0.92 dB and a G a of 12 dB at 2 GHz. These dc, rf, and high frequency noise characteristics make SiGe/Si MODFET's and MOS-MODFET's excellent candidates for wireless communications.
Paul M. Solomon, Isaac Lauer, et al.
IEEE Electron Device Letters
Anuj Madan, Jiong Jiong Mo, et al.
RADECS 2009
Anuj Madan, John D. Cressler, et al.
Solid-State Electronics
Fei Liu, Xiaoxiong Gu, et al.
ECTC 2010