Stable SRAM cell design for the 32 nm node and beyond
Leland Chang, David M. Fried, et al.
VLSI Technology 2005
We combine nanometer-scale polymer self assembly with advanced semiconductor microfabrication to produce metaloxide-semiconductor (MOS) capacitors with accumulation capacitance more than 400% higher than planar devices of the same lateral area. The self assembly technique achieves this degree of enhancement using only standard processing techniques, thereby obviating additional process complexity. These devices are suitable for use as on-chip power supply decoupling capacitors, particularly in high-performance silicon-on-insulator technology. © 2004 IEEE.
Leland Chang, David M. Fried, et al.
VLSI Technology 2005
Azalia Krasnoperova, Ying Zhang, et al.
Proceedings of SPIE - The International Society for Optical Engineering
Solomon Assefa, Fengnian Xia, et al.
CLEO 2009
Anna W. Topol, Douglas C. La Tulipe Jr., et al.
IBM J. Res. Dev