Conference paper
Compression for data archiving and backup revisited
Corneliu Constantinescu
SPIE Optical Engineering + Applications 2009
A method for growing heteroepitaxial Si films on sapphire was developed using a 6 nm thin Al layer at substrate temperature of 600 °C. Subsequently, the growth of Si nanowires was demonstrated on these films at 490 °C without breaking vacuum. We characterized the properties of the Si films by Raman scattering, X-ray diffraction and transmission electron microscopy and show that the crystal quality and dopant control are promising for photovoltaic applications. © 2010 Elsevier B.V.
Corneliu Constantinescu
SPIE Optical Engineering + Applications 2009
R.D. Murphy, R.O. Watts
Journal of Low Temperature Physics
Eloisa Bentivegna
Big Data 2022
A.B. McLean, R.H. Williams
Journal of Physics C: Solid State Physics