P.E. Schmid, P.S. Ho, et al.
Physical Review B
It is reasonable to assume that the volume increase of about 120% associated with the formation of a SiO2 molecule from a Si atom during thermal oxidation of Si is facilitated by viscoelastic flow of the newly formed SiO2 layer at the SiO2-Si interface. This flow is driven by a compressive plane stress. We propose that it is this stress which gives rise to a supersaturation of Si self-interstitials in the Si crystal, and that consequently the growth kinetics of oxidation-induced stacking faults is determined by the kinetics of the viscoelastic flow of the SiO2.
P.E. Schmid, P.S. Ho, et al.
Physical Review B
D. Braunig, K.H. Yang, et al.
physica status solidi (a)
J.G. Clabes, G.W. Rubloff, et al.
Physical Review B
U. Gösele, F.F. Morehead
Journal of Applied Physics