F.M. D'Heurle, J.E.E. Baglin, et al.
Journal of Applied Physics
Silicon samples implanted with both Ar and As at fluences of 1×1016/cm2 were irradiated with Q-switched Nd double-frequency laser pulses. Reordering of the damaged layers occurs for 30- and 130-keV Ar implants at about 0.6 and 1.3 J/cm2, respectively. An Ar concentration of the order of (1-3)×1020 atoms/cm 3 is retained, while good As substitutionality is observed. The presence of Ar atoms does not seem to inhibit the As-Si reordering during pulsed laser annealing, and likewise the As atoms do not seem to inhibit Ar out-diffusion. This behavior contrasts markedly with the strong coupling found in furnace annealing.
F.M. D'Heurle, J.E.E. Baglin, et al.
Journal of Applied Physics
C.S. Petersson, J.E.E. Baglin, et al.
Journal of Applied Physics
Z.Z. Bandić, H. Xu, et al.
MRS Proceedings 2003
J.E.E. Baglin, Witold Brostow, et al.
Journal of Materials Education