Douglass S. Kalika, David W. Giles, et al.
Journal of Rheology
We have fabricated graphene nano-ribbon field-effect transistor devices and investigated their electrical properties as a function of ribbon width. Our experiments show that the resistivity of a ribbon increases as its width decreases, indicating the impact of edge states. Analysis of temperature-dependent measurements suggests a finite quantum confinement gap opening in narrow ribbons. The electrical current noise of the graphene ribbon devices at low frequency is found to be dominated by the 1/f noise. © 2007 Elsevier B.V. All rights reserved.
Douglass S. Kalika, David W. Giles, et al.
Journal of Rheology
B.A. Hutchins, T.N. Rhodin, et al.
Surface Science
K.N. Tu
Materials Science and Engineering: A
Kafai Lai, Alan E. Rosenbluth, et al.
SPIE Advanced Lithography 2007