A.B. McLean, R.H. Williams
Journal of Physics C: Solid State Physics
We have fabricated graphene nano-ribbon field-effect transistor devices and investigated their electrical properties as a function of ribbon width. Our experiments show that the resistivity of a ribbon increases as its width decreases, indicating the impact of edge states. Analysis of temperature-dependent measurements suggests a finite quantum confinement gap opening in narrow ribbons. The electrical current noise of the graphene ribbon devices at low frequency is found to be dominated by the 1/f noise. © 2007 Elsevier B.V. All rights reserved.
A.B. McLean, R.H. Williams
Journal of Physics C: Solid State Physics
Kenneth R. Carter, Robert D. Miller, et al.
Macromolecules
Min Yang, Jeremy Schaub, et al.
Technical Digest-International Electron Devices Meeting
J. Tersoff
Applied Surface Science