T.R. McGuire, T.S. Plaskett, et al.
IEEE Transactions on Magnetics
U1-xSbx amorphous ferromagnets were prepared that show a magnetoresistance anisotropy (AMR) reaching 26% at 10 K, in a 50 kOe field. This is a striking result, since the AMR of typical amorphous ferromagnets does not exceed 1%. Large excess resistivity caused by domain walls is found to scale with 2, where is the tangent of the Hall angle. © 1990 The American Physical Society.
T.R. McGuire, T.S. Plaskett, et al.
IEEE Transactions on Magnetics
T.S. Plaskett, J.F. Woods
Journal of Crystal Growth
R.L. Greene, H. Maletta, et al.
Solid State Communications
T. Penney, M.W. Shafer, et al.
Advanced Ceramic Materials