Frank R. Libsch, Takatoshi Tsujimura
Active Matrix Liquid Crystal Displays Technology and Applications 1997
We investigate the gate field dependence of light absorption and emission of an individual, suspended semiconducting carbon nanotube using Raman and photoluminescence spectroscopies. We find a strong reduction in the absorption strength and a red shift of the E33 state of the nanotube with increasing gate field. The photoluminescence from the E11 state Is quenched even stronger. We explain these observations in terms of field-doping and Its effects on both the radiative and nonradiatlve decay rates of the excitons. Thus, gate field-induced doping constitutes an effective means of controlling the optical properties of carbon nanotube devices. © 2009 American Chemical Society.
Frank R. Libsch, Takatoshi Tsujimura
Active Matrix Liquid Crystal Displays Technology and Applications 1997
K.A. Chao
Physical Review B
T.N. Morgan
Semiconductor Science and Technology
D.D. Awschalom, J.-M. Halbout
Journal of Magnetism and Magnetic Materials