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Publication
IEDM 2005
Conference paper
From DRAM to SRAM with a novel SiGe-based negative differential resistance (NDR) device
Abstract
This paper presents a novel CMOS-compatible negative differential resistance (NDR) device based on SiGe gated diodes. Experimental results on various prototypes show that this device has very high peak currents and the highest reported peak-to-valley current ratios in SiGe systems to date. This NDR element can be easily integrated into a normal 1T1C DRAM cell to enable an SRAM-like operation with a much more compact cell size. © 2005 IEEE.