Formation of Si:CP layer through in-situ doping and implantation process for n-type metal-oxide-semiconductor devices

Abstract

In this study, the effect of Cluster Carbon implantation and thermal annealing for recrystallization on the properties of phosphorus doped Si (Si:P) epitaxial films was investigated. Several Cluster Carbon implantation conditions and recrystallization annealing techniques based on solid phase epitaxy with rapid thermal annealing (RTA), spike RTA (sRTA), and millisecond laser annealing have been employed. It was found that a high substitutional carbon concentration can be achieved by laser annealing while high thermal budget annealing caused the loss of almost half of the substitutional carbon. The reduction of end of range defects and stacking faults/dislocation loops at the surface of carbon and phosphorus doped Si (Si:CP) layers through the use of cold implantation and fewer implantations was confirmed. Although sRTA activates phosphorus, additional laser annealing improves phosphorus activation further in the Si:CP layer. The phosphorus profile is abrupt with Cluster Carbon implantation when compared to no carbon implantation. © 2014 Elsevier B.V.