W.C. Simpson, J.A. Yarmoff, et al.
Surface Science
The interaction between F atoms and crystalline Si, which is essential for etching processes in semiconductor device fabrication, is investigated with state-of-the-art theoretical techniques. A comprehensive picture of F reactions with the Si surface, the bulk, and the near-surface region is obtained, in terms of which the etching process is elucidated. Insertion of F into Si-Si bonds becomes possible because of relaxed steric constraints in the near-surface region. Dependence of the etch rate on doping follows naturally, in agreement with observations. © 1988 The American Physical Society.
W.C. Simpson, J.A. Yarmoff, et al.
Surface Science
J.H. Stathis, S.T. Pantelides
Physical Review B
Y. Bar-Yam, S.T. Pantelides, et al.
Physical Review B
M. Scheffler, S.T. Pantelides, et al.
Physical Review Letters