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RADECS 2009
This paper describes upsets of 65 nm flip-flops caused by Single-Event-Transients in clock-tree circuits. The upset rate is predicted through modeling, and compared to upset rates measured on a 65 nm test chip with 15 MeV carbon ions and 148 MeV protons. © 2009 IEEE.
James R. Schwank, Marty R. Shaneyfelt, et al.
RADECS 2009
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IEEE TNS
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RADECS 2011