About cookies on this site Our websites require some cookies to function properly (required). In addition, other cookies may be used with your consent to analyze site usage, improve the user experience and for advertising. For more information, please review your options. By visiting our website, you agree to our processing of information as described in IBM’sprivacy statement. To provide a smooth navigation, your cookie preferences will be shared across the IBM web domains listed here.
Conference paper
Fermi level depinning at metal-organic semiconductor interface for low-resistance ohmic contacts
Abstract
This paper presents the direct evidence and successful demonstration of Fermi-level depinning at metal-organic semiconductor (M/O) interfaces by inserting an ultrathin interfacial Si3N4 insulator in between. The contact behavior is tuned from rectifying to quasi-Ohmic and to tunneling by varying the Si3N4 thickness within 0-6 nm. Detailed physical mechanisms of Fermi-level pinning/depinning responsible for the M/O contact behavior are clarified based on a proposed lumped-dipole model. Experimental results are in good agreement with the theory and model. This work represents a significant step toward the fundamental understanding of M/O interface properties and technological advancement of achieving low-resistance Ohmic contacts for organic electronic device (e.g. thin-film transistor) applications. © 2009 IEEE.