Dipanjan Gope, Albert E. Ruehli, et al.
IEEE T-MTT
Nonlocal Hanle spin precession devices are fabricated on wafer scale epitaxial graphene utilizing conventional and scalable processing methods. To improve spin injection and reduce contact related spin relaxation, hafnium oxide is utilized as an interface barrier between the graphene on SiC(0001) and ferromagnetic metal contacts. The hafnium oxide layer is deposited by atomic layer deposition utilizing an organic seed layer. Spin precession is observed in the epitaxial graphene. © 2012 American Vacuum Society.
Dipanjan Gope, Albert E. Ruehli, et al.
IEEE T-MTT
Surendra B. Anantharaman, Joachim Kohlbrecher, et al.
MRS Fall Meeting 2020
Thomas H. Baum, Carl E. Larson, et al.
Journal of Organometallic Chemistry
Kigook Song, Robert D. Miller, et al.
Macromolecules