Investigations of silicon nano-crystal floating gate memories
Arvind Kumar, Jeffrey J. Welser, et al.
MRS Spring 2000
A sub-micron trenching technique has been developed to fabricate Aharonov-Bohm ring structures in a high mobility Si/Si0.7Ge0.3 modulation doped heterostructure. Scanning electron-beam lithography is used to expose the area defining the ring contour, and reactive-ion etching follows to recess this area, thus forcing electrons to flow inside the ring. Conductance in the Si/SiGe rings exhibits oscillations in magnetoresistance, which is the first observation of this effect in Si-based materials. The amplitude of the oscillations is comparable to that of similar devices on similar mobility GaAs/GaAlAs heterostructures. © 1995 Elsevier Science B.V. All rights reserved.
Arvind Kumar, Jeffrey J. Welser, et al.
MRS Spring 2000
D.D. Awschalom, J.-M. Halbout
Journal of Magnetism and Magnetic Materials
Corneliu Constantinescu
SPIE Optical Engineering + Applications 2009
Q.R. Huang, Ho-Cheol Kim, et al.
Macromolecules