Fabrication, device design and mobility enhancement of germanium channel MOSFETs

Abstract

This paper reviews the current critical issues on the fabrication of Ge surface channel MOSFET devices. Compared with surface channel Ge MOSFETs, strained Ge buried channel structures can be integrated with fewer processing challenges to achieve significantly enhanced hole mobility and an improved electron mobility. The device design and scalability of the strained Ge buried channel MOSFETs are presented based on our recent results. © 2004 IEEE.