Heinz Schmid, Hans Biebuyck, et al.
Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Experimental evidence is presented showing that the thickness dependence observed for charge-to-breakdown measurements of very thin oxide layers in metal-oxide-semiconductor structures is correlated with that for the reduction in total generated microscopic defects necessary to induce destruction. These results are discussed in relationship to the formation of paths connecting some of these defects from the cathode to the anode at the time of breakdown.
Heinz Schmid, Hans Biebuyck, et al.
Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
T.N. Morgan
Semiconductor Science and Technology
William Hinsberg, Joy Cheng, et al.
SPIE Advanced Lithography 2010
Min Yang, Jeremy Schaub, et al.
Technical Digest-International Electron Devices Meeting