Conference paper
A Si-Ge HBT technology for the wireless marketplace
D. Ahlgren, D.A. Sunderland, et al.
ESSDERC 1996
Silicon nitride films have been prepared by excimer laser photolysis of ammonia/silane or ammonia/disilane mixtures at temperatures in the range 225-625°C in a hot-walled low-pressure reactor. The highest-quality films, deposited at 225°C, have high breakdown-field strength, Ebd=8.8 Mv cm-1, low midgap interface-state-trap densities, N it=1.7×1011 eV-1 cm-2, and a dielectric constant of ε=4.8.
D. Ahlgren, D.A. Sunderland, et al.
ESSDERC 1996
M. Arafa, P. Fay, et al.
IEEE Electron Device Letters
S. Subbanna, L. Larson, et al.
Proceedings of the Custom Integrated Circuits Conference
K. Ismail, B.S. Meyerson, et al.
Surface Science