LASER-INDUCED FLUORESCENCE DETECTION OF DIATOMIC PRODUCTS OF REACTIVE ION ETCHING: SiN, SiO, AND SiF.

Abstract

Laser-induced fluorescence is used to detect a variety of silicon-containing diatomic radicals produced by the reactive ion etching and glow discharge sputtering of silicon and its oxide and nitride. The products include SiN, SiO, and SiF. Examination of the concentration of these molecules as a function of plasma conditions provides information about their production mechanisms.