Leonello Dori, Maurizio Arienzo, et al.
Journal of Applied Physics
Experimental results on oxide breakdown in thin insulator metal-oxide-semiconductor structures are presented to show that at a microscopic level breakdown is related to defects located near the injecting interface. In addition, breakdown is found to be almost independent of electron fluence.
Leonello Dori, Maurizio Arienzo, et al.
Journal of Applied Physics
Charles F. Webb, Carl J. Anderson, et al.
IEEE Journal of Solid-State Circuits
Piero Olivo, Thao N. Nguyen, et al.
IEEE T-ED
Johannes M. C. Stork, David L. Harame, et al.
IEEE T-ED