Epitaxial base transistors with ultrahigh vacuum chemical vapor deposition (uhv/cvd) epitaxy: Enhanced profile control for greater flexibility in device design

Abstract

Small-geometry silicon-bipolar transistors with -8-k/D base sheet resistances and >100-nm base widths have been fabricated using an ultrahigh vacuum chemical vapor deposition (UHV/CVD) 550 °C epitaxy process. The results show that UHV/CVD low-tempera-ture epitaxy can provide thin highly doped base profiles. This process allows a higher degree of decoupling between base thickness and sheet resistance than is typically obtained with an ion-implanted process. © 1989 IEEE